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FQU10N20TU_AM002

FQU10N20TU_AM002

For Reference Only

Part Number FQU10N20TU_AM002
PNEDA Part # FQU10N20TU_AM002
Description MOSFET N-CH 200V 7.6A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,916
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQU10N20TU_AM002 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQU10N20TU_AM002
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQU10N20TU_AM002, FQU10N20TU_AM002 Datasheet (Total Pages: 214, Size: 3,982.36 KB)
PDFIRFR224BTM_TC002 Datasheet Cover
IRFR224BTM_TC002 Datasheet Page 2 IRFR224BTM_TC002 Datasheet Page 3 IRFR224BTM_TC002 Datasheet Page 4 IRFR224BTM_TC002 Datasheet Page 5 IRFR224BTM_TC002 Datasheet Page 6 IRFR224BTM_TC002 Datasheet Page 7 IRFR224BTM_TC002 Datasheet Page 8 IRFR224BTM_TC002 Datasheet Page 9 IRFR224BTM_TC002 Datasheet Page 10 IRFR224BTM_TC002 Datasheet Page 11

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FQU10N20TU_AM002 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 51W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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