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FQPF8N60CYDTU

FQPF8N60CYDTU

For Reference Only

Part Number FQPF8N60CYDTU
PNEDA Part # FQPF8N60CYDTU
Description MOSFET N-CH 600V 7.5A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF8N60CYDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF8N60CYDTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF8N60CYDTU, FQPF8N60CYDTU Datasheet (Total Pages: 10, Size: 984.78 KB)
PDFFQPF8N60CT Datasheet Cover
FQPF8N60CT Datasheet Page 2 FQPF8N60CT Datasheet Page 3 FQPF8N60CT Datasheet Page 4 FQPF8N60CT Datasheet Page 5 FQPF8N60CT Datasheet Page 6 FQPF8N60CT Datasheet Page 7 FQPF8N60CT Datasheet Page 8 FQPF8N60CT Datasheet Page 9 FQPF8N60CT Datasheet Page 10

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FQPF8N60CYDTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1255pF @ 25V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3 (Y-Forming)
Package / CaseTO-220-3 Full Pack, Formed Leads

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