Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQPF6N60

FQPF6N60

For Reference Only

Part Number FQPF6N60
PNEDA Part # FQPF6N60
Description MOSFET N-CH 600V 3.6A TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQPF6N60 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQPF6N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQPF6N60, FQPF6N60 Datasheet (Total Pages: 8, Size: 544.33 KB)
PDFFQPF6N60 Datasheet Cover
FQPF6N60 Datasheet Page 2 FQPF6N60 Datasheet Page 3 FQPF6N60 Datasheet Page 4 FQPF6N60 Datasheet Page 5 FQPF6N60 Datasheet Page 6 FQPF6N60 Datasheet Page 7 FQPF6N60 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQPF6N60 Datasheet
  • where to find FQPF6N60
  • ON Semiconductor

  • ON Semiconductor FQPF6N60
  • FQPF6N60 PDF Datasheet
  • FQPF6N60 Stock

  • FQPF6N60 Pinout
  • Datasheet FQPF6N60
  • FQPF6N60 Supplier

  • ON Semiconductor Distributor
  • FQPF6N60 Price
  • FQPF6N60 Distributor

FQPF6N60 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IXFM1633

IXYS

Manufacturer

IXYS

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NVMYS1D3N04CTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SC-100, SOT-669

BUK9575-100A,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1704pF @ 25V

FET Feature

-

Power Dissipation (Max)

99W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

3000V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

21Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1890pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

ISOPLUSi5-Pak™

IRF8252TRPBF-1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5305pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

B560CQ-13-F

B560CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

SDP1108-R

SDP1108-R

Sensirion AG

SENSOR PRESSURE DIFF MODULE

TA8428K(O,S)

TA8428K(O,S)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER 7V-27V 7HSIP

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB

ISD2360SYI

ISD2360SYI

Nuvoton Technology

IC VOICE REC/PLAY 64SEC 16SOP

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

TSV912IDT

TSV912IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

VS-72CPQ030PBF

VS-72CPQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO247AC

ACF451832-153-TD01

ACF451832-153-TD01

TDK

FILTER LC(T) SMD