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FQP630TSTU

FQP630TSTU

For Reference Only

Part Number FQP630TSTU
PNEDA Part # FQP630TSTU
Description MOSFET N-CH 200V 9A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP630TSTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP630TSTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP630TSTU, FQP630TSTU Datasheet (Total Pages: 8, Size: 733.7 KB)
PDFFQP630 Datasheet Cover
FQP630 Datasheet Page 2 FQP630 Datasheet Page 3 FQP630 Datasheet Page 4 FQP630 Datasheet Page 5 FQP630 Datasheet Page 6 FQP630 Datasheet Page 7 FQP630 Datasheet Page 8

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FQP630TSTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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