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FQP33N10

FQP33N10

For Reference Only

Part Number FQP33N10
PNEDA Part # FQP33N10
Description MOSFET N-CH 100V 33A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 23,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 15 - Mar 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP33N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP33N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP33N10, FQP33N10 Datasheet (Total Pages: 10, Size: 560.55 KB)
PDFFQP33N10 Datasheet Cover
FQP33N10 Datasheet Page 2 FQP33N10 Datasheet Page 3 FQP33N10 Datasheet Page 4 FQP33N10 Datasheet Page 5 FQP33N10 Datasheet Page 6 FQP33N10 Datasheet Page 7 FQP33N10 Datasheet Page 8 FQP33N10 Datasheet Page 9 FQP33N10 Datasheet Page 10

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FQP33N10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
FET Feature-
Power Dissipation (Max)127W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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