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FQP2P40-F080

FQP2P40-F080

For Reference Only

Part Number FQP2P40-F080
PNEDA Part # FQP2P40-F080
Description MOSFET P-CH 400V 2A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 22,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP2P40-F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP2P40-F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP2P40-F080, FQP2P40-F080 Datasheet (Total Pages: 8, Size: 1,076.7 KB)
PDFFQP2P40-F080 Datasheet Cover
FQP2P40-F080 Datasheet Page 2 FQP2P40-F080 Datasheet Page 3 FQP2P40-F080 Datasheet Page 4 FQP2P40-F080 Datasheet Page 5 FQP2P40-F080 Datasheet Page 6 FQP2P40-F080 Datasheet Page 7 FQP2P40-F080 Datasheet Page 8

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FQP2P40-F080 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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