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FQP19N20C

FQP19N20C

For Reference Only

Part Number FQP19N20C
PNEDA Part # FQP19N20C
Description MOSFET N-CH 200V 19A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 16,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP19N20C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP19N20C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP19N20C, FQP19N20C Datasheet (Total Pages: 12, Size: 793.36 KB)
PDFFQPF19N20C Datasheet Cover
FQPF19N20C Datasheet Page 2 FQPF19N20C Datasheet Page 3 FQPF19N20C Datasheet Page 4 FQPF19N20C Datasheet Page 5 FQPF19N20C Datasheet Page 6 FQPF19N20C Datasheet Page 7 FQPF19N20C Datasheet Page 8 FQPF19N20C Datasheet Page 9 FQPF19N20C Datasheet Page 10 FQPF19N20C Datasheet Page 11

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FQP19N20C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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