Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQN1N60CBU

FQN1N60CBU

For Reference Only

Part Number FQN1N60CBU
PNEDA Part # FQN1N60CBU
Description MOSFET N-CH 600V 0.3A TO-92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQN1N60CBU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQN1N60CBU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQN1N60CBU Datasheet
  • where to find FQN1N60CBU
  • ON Semiconductor

  • ON Semiconductor FQN1N60CBU
  • FQN1N60CBU PDF Datasheet
  • FQN1N60CBU Stock

  • FQN1N60CBU Pinout
  • Datasheet FQN1N60CBU
  • FQN1N60CBU Supplier

  • ON Semiconductor Distributor
  • FQN1N60CBU Price
  • FQN1N60CBU Distributor

FQN1N60CBU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta), 3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

The Products You May Be Interested In

RJK1055DPB-00#J5

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 10V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK

Package / Case

SC-100, SOT-669

NTGS3441T1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.65A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 5V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

SPP24N60C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

240W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

NVMFS5C645NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

RSD046P05TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

155mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

FET Feature

-

Power Dissipation (Max)

850mW (Ta), 15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CPT3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN

C5750X7S2A106K230KE

C5750X7S2A106K230KE

TDK

CAP CER 10UF 100V X7S 2220

MMA02040C1001FB300

MMA02040C1001FB300

Vishay Beyschlag

RES SMD 1K OHM 1% 0.4W 0204

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

MC9S12HZ256VAL

MC9S12HZ256VAL

NXP

IC MCU 16BIT 256KB FLASH 112LQFP

NC7SZ125P5X

NC7SZ125P5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-5

AT45DB321D-SU

AT45DB321D-SU

Adesto Technologies

IC FLASH 32M SPI 66MHZ 8SOIC

FDS6675BZ

FDS6675BZ

ON Semiconductor

MOSFET P-CH 30V 8-SOIC

ULN2804A

ULN2804A

STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL