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FQI6N60CTU

FQI6N60CTU

For Reference Only

Part Number FQI6N60CTU
PNEDA Part # FQI6N60CTU
Description MOSFET N-CH 600V 5.5A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,794
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI6N60CTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI6N60CTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI6N60CTU, FQI6N60CTU Datasheet (Total Pages: 9, Size: 681.08 KB)
PDFFQB6N60CTM Datasheet Cover
FQB6N60CTM Datasheet Page 2 FQB6N60CTM Datasheet Page 3 FQB6N60CTM Datasheet Page 4 FQB6N60CTM Datasheet Page 5 FQB6N60CTM Datasheet Page 6 FQB6N60CTM Datasheet Page 7 FQB6N60CTM Datasheet Page 8 FQB6N60CTM Datasheet Page 9

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FQI6N60CTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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