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FQI4N80TU

FQI4N80TU

For Reference Only

Part Number FQI4N80TU
PNEDA Part # FQI4N80TU
Description MOSFET N-CH 800V 3.9A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI4N80TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI4N80TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI4N80TU, FQI4N80TU Datasheet (Total Pages: 11, Size: 971.56 KB)
PDFFQI4N80TU Datasheet Cover
FQI4N80TU Datasheet Page 2 FQI4N80TU Datasheet Page 3 FQI4N80TU Datasheet Page 4 FQI4N80TU Datasheet Page 5 FQI4N80TU Datasheet Page 6 FQI4N80TU Datasheet Page 7 FQI4N80TU Datasheet Page 8 FQI4N80TU Datasheet Page 9 FQI4N80TU Datasheet Page 10 FQI4N80TU Datasheet Page 11

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FQI4N80TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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