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FQI3N30TU

FQI3N30TU

For Reference Only

Part Number FQI3N30TU
PNEDA Part # FQI3N30TU
Description MOSFET N-CH 300V 3.2A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI3N30TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI3N30TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI3N30TU, FQI3N30TU Datasheet (Total Pages: 9, Size: 724.05 KB)
PDFFQB3N30TM Datasheet Cover
FQB3N30TM Datasheet Page 2 FQB3N30TM Datasheet Page 3 FQB3N30TM Datasheet Page 4 FQB3N30TM Datasheet Page 5 FQB3N30TM Datasheet Page 6 FQB3N30TM Datasheet Page 7 FQB3N30TM Datasheet Page 8 FQB3N30TM Datasheet Page 9

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FQI3N30TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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