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FQI2N80TU

FQI2N80TU

For Reference Only

Part Number FQI2N80TU
PNEDA Part # FQI2N80TU
Description MOSFET N-CH 800V 2.4A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI2N80TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI2N80TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI2N80TU, FQI2N80TU Datasheet (Total Pages: 9, Size: 661.38 KB)
PDFFQB2N80TM Datasheet Cover
FQB2N80TM Datasheet Page 2 FQB2N80TM Datasheet Page 3 FQB2N80TM Datasheet Page 4 FQB2N80TM Datasheet Page 5 FQB2N80TM Datasheet Page 6 FQB2N80TM Datasheet Page 7 FQB2N80TM Datasheet Page 8 FQB2N80TM Datasheet Page 9

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FQI2N80TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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