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FQI2N30TU

FQI2N30TU

For Reference Only

Part Number FQI2N30TU
PNEDA Part # FQI2N30TU
Description MOSFET N-CH 300V 2.1A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI2N30TU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI2N30TU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI2N30TU, FQI2N30TU Datasheet (Total Pages: 9, Size: 746.5 KB)
PDFFQB2N30TM Datasheet Cover
FQB2N30TM Datasheet Page 2 FQB2N30TM Datasheet Page 3 FQB2N30TM Datasheet Page 4 FQB2N30TM Datasheet Page 5 FQB2N30TM Datasheet Page 6 FQB2N30TM Datasheet Page 7 FQB2N30TM Datasheet Page 8 FQB2N30TM Datasheet Page 9

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FQI2N30TU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds130pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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