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FQD9N25TM-F080

FQD9N25TM-F080

For Reference Only

Part Number FQD9N25TM-F080
PNEDA Part # FQD9N25TM-F080
Description MOSFET N-CH 250V 7.4A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD9N25TM-F080 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD9N25TM-F080
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD9N25TM-F080, FQD9N25TM-F080 Datasheet (Total Pages: 10, Size: 905.97 KB)
PDFFQD9N25TF Datasheet Cover
FQD9N25TF Datasheet Page 2 FQD9N25TF Datasheet Page 3 FQD9N25TF Datasheet Page 4 FQD9N25TF Datasheet Page 5 FQD9N25TF Datasheet Page 6 FQD9N25TF Datasheet Page 7 FQD9N25TF Datasheet Page 8 FQD9N25TF Datasheet Page 9 FQD9N25TF Datasheet Page 10

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FQD9N25TM-F080 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 55W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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