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FQD8P10TM

FQD8P10TM

For Reference Only

Part Number FQD8P10TM
PNEDA Part # FQD8P10TM
Description MOSFET P-CH 100V 6.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD8P10TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD8P10TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD8P10TM, FQD8P10TM Datasheet (Total Pages: 11, Size: 1,409.02 KB)
PDFFQD8P10TM Datasheet Cover
FQD8P10TM Datasheet Page 2 FQD8P10TM Datasheet Page 3 FQD8P10TM Datasheet Page 4 FQD8P10TM Datasheet Page 5 FQD8P10TM Datasheet Page 6 FQD8P10TM Datasheet Page 7 FQD8P10TM Datasheet Page 8 FQD8P10TM Datasheet Page 9 FQD8P10TM Datasheet Page 10 FQD8P10TM Datasheet Page 11

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FQD8P10TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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