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FQD7N10LTM

FQD7N10LTM

For Reference Only

Part Number FQD7N10LTM
PNEDA Part # FQD7N10LTM
Description MOSFET N-CH 100V 5.8A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 24,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD7N10LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD7N10LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD7N10LTM, FQD7N10LTM Datasheet (Total Pages: 10, Size: 1,347.54 KB)
PDFFQD7N10LTM Datasheet Cover
FQD7N10LTM Datasheet Page 2 FQD7N10LTM Datasheet Page 3 FQD7N10LTM Datasheet Page 4 FQD7N10LTM Datasheet Page 5 FQD7N10LTM Datasheet Page 6 FQD7N10LTM Datasheet Page 7 FQD7N10LTM Datasheet Page 8 FQD7N10LTM Datasheet Page 9 FQD7N10LTM Datasheet Page 10

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FQD7N10LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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