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FQD6N50CTM

FQD6N50CTM

For Reference Only

Part Number FQD6N50CTM
PNEDA Part # FQD6N50CTM
Description MOSFET N-CH 500V 4.5A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,132
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD6N50CTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD6N50CTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD6N50CTM, FQD6N50CTM Datasheet (Total Pages: 10, Size: 652.36 KB)
PDFFQD6N50CTM_F080 Datasheet Cover
FQD6N50CTM_F080 Datasheet Page 2 FQD6N50CTM_F080 Datasheet Page 3 FQD6N50CTM_F080 Datasheet Page 4 FQD6N50CTM_F080 Datasheet Page 5 FQD6N50CTM_F080 Datasheet Page 6 FQD6N50CTM_F080 Datasheet Page 7 FQD6N50CTM_F080 Datasheet Page 8 FQD6N50CTM_F080 Datasheet Page 9 FQD6N50CTM_F080 Datasheet Page 10

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FQD6N50CTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 61W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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