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FQD4N50TM_WS

FQD4N50TM_WS

For Reference Only

Part Number FQD4N50TM_WS
PNEDA Part # FQD4N50TM_WS
Description MOSFET N-CH 500V 2.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 15 - Apr 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD4N50TM_WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD4N50TM_WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD4N50TM_WS, FQD4N50TM_WS Datasheet (Total Pages: 9, Size: 844.78 KB)
PDFFQD4N50TM_WS Datasheet Cover
FQD4N50TM_WS Datasheet Page 2 FQD4N50TM_WS Datasheet Page 3 FQD4N50TM_WS Datasheet Page 4 FQD4N50TM_WS Datasheet Page 5 FQD4N50TM_WS Datasheet Page 6 FQD4N50TM_WS Datasheet Page 7 FQD4N50TM_WS Datasheet Page 8 FQD4N50TM_WS Datasheet Page 9

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FQD4N50TM_WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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