Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD2N60CTM-WS

FQD2N60CTM-WS

For Reference Only

Part Number FQD2N60CTM-WS
PNEDA Part # FQD2N60CTM-WS
Description MOSFET N-CH 600V 1.9A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD2N60CTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD2N60CTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD2N60CTM-WS, FQD2N60CTM-WS Datasheet (Total Pages: 7, Size: 882.14 KB)
PDFFQD2N60CTM-WS Datasheet Cover
FQD2N60CTM-WS Datasheet Page 2 FQD2N60CTM-WS Datasheet Page 3 FQD2N60CTM-WS Datasheet Page 4 FQD2N60CTM-WS Datasheet Page 5 FQD2N60CTM-WS Datasheet Page 6 FQD2N60CTM-WS Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD2N60CTM-WS Datasheet
  • where to find FQD2N60CTM-WS
  • ON Semiconductor

  • ON Semiconductor FQD2N60CTM-WS
  • FQD2N60CTM-WS PDF Datasheet
  • FQD2N60CTM-WS Stock

  • FQD2N60CTM-WS Pinout
  • Datasheet FQD2N60CTM-WS
  • FQD2N60CTM-WS Supplier

  • ON Semiconductor Distributor
  • FQD2N60CTM-WS Price
  • FQD2N60CTM-WS Distributor

FQD2N60CTM-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

BSP125 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

120mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

45Ohm @ 120mA, 10V

Vgs(th) (Max) @ Id

2.3V @ 94µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

FQD2N60TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.7Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STU7N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

271pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

300mOhm @ 900mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.1nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 15V

FET Feature

-

Power Dissipation (Max)

275mW (Ta), 1.065W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323-3

Package / Case

SC-70, SOT-323

FDD6N20TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

HX1198FNL

HX1198FNL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

TL431ACLP

TL431ACLP

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5

AD7768-4BSTZ

AD7768-4BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

SMAJ24A

SMAJ24A

Littelfuse

TVS DIODE 24V 38.9V DO214AC

MPU-6000

MPU-6000

TDK InvenSense

IMU ACCEL/GYRO I2C/SPI 24QFN

PM450CLA060

PM450CLA060

Powerex Inc.

MOD IPM L-SER 6PAC 600V 450A

ADM3076EYRZ

ADM3076EYRZ

Analog Devices

IC TRANSCEIVER FULL 1/1 14SOIC

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC