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FQD2N60CTM-WS

FQD2N60CTM-WS

For Reference Only

Part Number FQD2N60CTM-WS
PNEDA Part # FQD2N60CTM-WS
Description MOSFET N-CH 600V 1.9A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD2N60CTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD2N60CTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD2N60CTM-WS, FQD2N60CTM-WS Datasheet (Total Pages: 7, Size: 882.14 KB)
PDFFQD2N60CTM-WS Datasheet Cover
FQD2N60CTM-WS Datasheet Page 2 FQD2N60CTM-WS Datasheet Page 3 FQD2N60CTM-WS Datasheet Page 4 FQD2N60CTM-WS Datasheet Page 5 FQD2N60CTM-WS Datasheet Page 6 FQD2N60CTM-WS Datasheet Page 7

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FQD2N60CTM-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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