Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD2N50TF

FQD2N50TF

For Reference Only

Part Number FQD2N50TF
PNEDA Part # FQD2N50TF
Description MOSFET N-CH 500V 1.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,582
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD2N50TF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD2N50TF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD2N50TF, FQD2N50TF Datasheet (Total Pages: 9, Size: 714.75 KB)
PDFFQD2N50TF Datasheet Cover
FQD2N50TF Datasheet Page 2 FQD2N50TF Datasheet Page 3 FQD2N50TF Datasheet Page 4 FQD2N50TF Datasheet Page 5 FQD2N50TF Datasheet Page 6 FQD2N50TF Datasheet Page 7 FQD2N50TF Datasheet Page 8 FQD2N50TF Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD2N50TF Datasheet
  • where to find FQD2N50TF
  • ON Semiconductor

  • ON Semiconductor FQD2N50TF
  • FQD2N50TF PDF Datasheet
  • FQD2N50TF Stock

  • FQD2N50TF Pinout
  • Datasheet FQD2N50TF
  • FQD2N50TF Supplier

  • ON Semiconductor Distributor
  • FQD2N50TF Price
  • FQD2N50TF Distributor

FQD2N50TF Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRLR6225TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 21A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3770pF @ 10V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RS3E180ATTB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRFC4368D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRF3315STRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUF76437S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2230pF @ 25V

FET Feature

-

Power Dissipation (Max)

155W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

FDS6910

FDS6910

ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

AS5263-HQFM

AS5263-HQFM

ams

SENSOR ANGLE 360DEG SMD

MF-R020

MF-R020

Bourns

PTC RESET FUSE 60V 200MA RADIAL

ADA4091-2ACPZ-RL

ADA4091-2ACPZ-RL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8LFCSP

IM03GR

IM03GR

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 5VDC

AD7305BRZ

AD7305BRZ

Analog Devices

IC DAC 8BIT V-OUT 20SOIC

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

WSL20108L000FEA

WSL20108L000FEA

Vishay Dale

RES 0.008 OHM 1% 1/2W 2010

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

LIS3MDLTR

LIS3MDLTR

STMicroelectronics

SENSOR MR I2C/SPI 12LGA

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W