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FQD2N100TF

FQD2N100TF

For Reference Only

Part Number FQD2N100TF
PNEDA Part # FQD2N100TF
Description MOSFET N-CH 1000V 1.6A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD2N100TF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD2N100TF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD2N100TF, FQD2N100TF Datasheet (Total Pages: 9, Size: 846.88 KB)
PDFFQD2N100TF Datasheet Cover
FQD2N100TF Datasheet Page 2 FQD2N100TF Datasheet Page 3 FQD2N100TF Datasheet Page 4 FQD2N100TF Datasheet Page 5 FQD2N100TF Datasheet Page 6 FQD2N100TF Datasheet Page 7 FQD2N100TF Datasheet Page 8 FQD2N100TF Datasheet Page 9

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FQD2N100TF Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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