Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQD18N20V2TM

FQD18N20V2TM

For Reference Only

Part Number FQD18N20V2TM
PNEDA Part # FQD18N20V2TM
Description MOSFET N-CH 200V 15A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQD18N20V2TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQD18N20V2TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQD18N20V2TM, FQD18N20V2TM Datasheet (Total Pages: 9, Size: 903.17 KB)
PDFFQD18N20V2TM Datasheet Cover
FQD18N20V2TM Datasheet Page 2 FQD18N20V2TM Datasheet Page 3 FQD18N20V2TM Datasheet Page 4 FQD18N20V2TM Datasheet Page 5 FQD18N20V2TM Datasheet Page 6 FQD18N20V2TM Datasheet Page 7 FQD18N20V2TM Datasheet Page 8 FQD18N20V2TM Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQD18N20V2TM Datasheet
  • where to find FQD18N20V2TM
  • ON Semiconductor

  • ON Semiconductor FQD18N20V2TM
  • FQD18N20V2TM PDF Datasheet
  • FQD18N20V2TM Stock

  • FQD18N20V2TM Pinout
  • Datasheet FQD18N20V2TM
  • FQD18N20V2TM Supplier

  • ON Semiconductor Distributor
  • FQD18N20V2TM Price
  • FQD18N20V2TM Distributor

FQD18N20V2TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRLR3114ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3810pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DN2535N3-G-P003

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

350V

Current - Continuous Drain (Id) @ 25°C

120mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

25Ohm @ 120mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92 (TO-226)

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

TPH3206LSB

Transphorm

Manufacturer

Transphorm

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 480V

FET Feature

-

Power Dissipation (Max)

81W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (8x8)

Package / Case

3-PowerDFN

CSD16323Q3C

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 24A, 8V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SON-EP (3x3)

Package / Case

8-PowerTDFN

IRF1010ZL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2840pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

7M24000020

7M24000020

TXC

CRYSTAL 24MHZ 18PF SMD

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

MAX3232EUE+T

MAX3232EUE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

MMSZ5232B-7-F

MMSZ5232B-7-F

Diodes Incorporated

DIODE ZENER 5.6V 500MW SOD123

LV8548MC-AH

LV8548MC-AH

ON Semiconductor

IC MOTOR DRIVER PAR MFP10S

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

PM5022-101M-RC

PM5022-101M-RC

Bourns

FIXED IND 100UH 1.7A 190 MOHM

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

NLAS4599DFT2G

NLAS4599DFT2G

ON Semiconductor

IC SWITCH SPDT SC88

MAX1104EUA+

MAX1104EUA+

Maxim Integrated

IC CODEC 8BIT 8-UMAX