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FQB8N60CTM-WS

FQB8N60CTM-WS

For Reference Only

Part Number FQB8N60CTM-WS
PNEDA Part # FQB8N60CTM-WS
Description MOSFET N-CH 600V 7.5A
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB8N60CTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB8N60CTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB8N60CTM-WS, FQB8N60CTM-WS Datasheet (Total Pages: 9, Size: 754.28 KB)
PDFFQB8N60CTM-WS Datasheet Cover
FQB8N60CTM-WS Datasheet Page 2 FQB8N60CTM-WS Datasheet Page 3 FQB8N60CTM-WS Datasheet Page 4 FQB8N60CTM-WS Datasheet Page 5 FQB8N60CTM-WS Datasheet Page 6 FQB8N60CTM-WS Datasheet Page 7 FQB8N60CTM-WS Datasheet Page 8 FQB8N60CTM-WS Datasheet Page 9

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FQB8N60CTM-WS Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1255pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 147W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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