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FQB6N90TM_AM002

FQB6N90TM_AM002

For Reference Only

Part Number FQB6N90TM_AM002
PNEDA Part # FQB6N90TM_AM002
Description MOSFET N-CH 900V 5.8A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB6N90TM_AM002 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB6N90TM_AM002
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB6N90TM_AM002, FQB6N90TM_AM002 Datasheet (Total Pages: 9, Size: 598.72 KB)
PDFFQB6N90TM_AM002 Datasheet Cover
FQB6N90TM_AM002 Datasheet Page 2 FQB6N90TM_AM002 Datasheet Page 3 FQB6N90TM_AM002 Datasheet Page 4 FQB6N90TM_AM002 Datasheet Page 5 FQB6N90TM_AM002 Datasheet Page 6 FQB6N90TM_AM002 Datasheet Page 7 FQB6N90TM_AM002 Datasheet Page 8 FQB6N90TM_AM002 Datasheet Page 9

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FQB6N90TM_AM002 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1880pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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