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FQB32N12V2TM

FQB32N12V2TM

For Reference Only

Part Number FQB32N12V2TM
PNEDA Part # FQB32N12V2TM
Description MOSFET N-CH 120V 32A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB32N12V2TM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB32N12V2TM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB32N12V2TM, FQB32N12V2TM Datasheet (Total Pages: 9, Size: 649.05 KB)
PDFFQB32N12V2TM Datasheet Cover
FQB32N12V2TM Datasheet Page 2 FQB32N12V2TM Datasheet Page 3 FQB32N12V2TM Datasheet Page 4 FQB32N12V2TM Datasheet Page 5 FQB32N12V2TM Datasheet Page 6 FQB32N12V2TM Datasheet Page 7 FQB32N12V2TM Datasheet Page 8 FQB32N12V2TM Datasheet Page 9

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FQB32N12V2TM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1860pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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