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FQB19N20LTM

FQB19N20LTM

For Reference Only

Part Number FQB19N20LTM
PNEDA Part # FQB19N20LTM
Description MOSFET N-CH 200V 21A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB19N20LTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB19N20LTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB19N20LTM, FQB19N20LTM Datasheet (Total Pages: 10, Size: 1,041.97 KB)
PDFFQB19N20LTM Datasheet Cover
FQB19N20LTM Datasheet Page 2 FQB19N20LTM Datasheet Page 3 FQB19N20LTM Datasheet Page 4 FQB19N20LTM Datasheet Page 5 FQB19N20LTM Datasheet Page 6 FQB19N20LTM Datasheet Page 7 FQB19N20LTM Datasheet Page 8 FQB19N20LTM Datasheet Page 9 FQB19N20LTM Datasheet Page 10

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FQB19N20LTM Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs140mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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