Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FQB10N50CFTM-WS

FQB10N50CFTM-WS

For Reference Only

Part Number FQB10N50CFTM-WS
PNEDA Part # FQB10N50CFTM-WS
Description MOSFET N-CH 500V 10A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQB10N50CFTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQB10N50CFTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQB10N50CFTM-WS, FQB10N50CFTM-WS Datasheet (Total Pages: 8, Size: 1,211.94 KB)
PDFFQB10N50CFTM-WS Datasheet Cover
FQB10N50CFTM-WS Datasheet Page 2 FQB10N50CFTM-WS Datasheet Page 3 FQB10N50CFTM-WS Datasheet Page 4 FQB10N50CFTM-WS Datasheet Page 5 FQB10N50CFTM-WS Datasheet Page 6 FQB10N50CFTM-WS Datasheet Page 7 FQB10N50CFTM-WS Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FQB10N50CFTM-WS Datasheet
  • where to find FQB10N50CFTM-WS
  • ON Semiconductor

  • ON Semiconductor FQB10N50CFTM-WS
  • FQB10N50CFTM-WS PDF Datasheet
  • FQB10N50CFTM-WS Stock

  • FQB10N50CFTM-WS Pinout
  • Datasheet FQB10N50CFTM-WS
  • FQB10N50CFTM-WS Supplier

  • ON Semiconductor Distributor
  • FQB10N50CFTM-WS Price
  • FQB10N50CFTM-WS Distributor

FQB10N50CFTM-WS Specifications

ManufacturerON Semiconductor
SeriesFRFET®, QFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs610mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
FET Feature-
Power Dissipation (Max)143W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

RCJ200N20TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPW60R090CFD7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 570µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2103pF @ 400V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

MTM761110LBF

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

34mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

WSMini6-F1-B

Package / Case

6-SMD, Flat Leads

SPP80N06S2L-06

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 69A, 10V

Vgs(th) (Max) @ Id

2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5050pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPZ60R099C7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

99mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id

4V @ 490µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1819pF @ 400V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4

Package / Case

TO-247-4

Recently Sold

BMI160

BMI160

Bosch Sensortec

IMU ACCEL/GYRO I2C/SPI 14LGA

1.5SMC15AT3G

1.5SMC15AT3G

Littelfuse

TVS DIODE 12.8V 21.2V SMC

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

S34ML02G104TFI010

S34ML02G104TFI010

SkyHigh Memory Limited

IC FLASH 2G PARALLEL 48TSOP I

SMBJ26A-E3/52

SMBJ26A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 26V 42.1V DO214AA

MCP1725T-3302E/MC

MCP1725T-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

MMBD7000-7-F

MMBD7000-7-F

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

HCM0703-4R7-R

HCM0703-4R7-R

Eaton - Electronics Division

FIXED IND 4.7UH 5.5A 40 MOHM SMD

M25PX16-VMW6TG TR

M25PX16-VMW6TG TR

Micron Technology Inc.

IC FLASH 16M SPI 75MHZ 8SO

LQH43CN100K03L

LQH43CN100K03L

Murata

FIXED IND 10UH 650MA 240 MOHM

DS18S20Z+T&R

DS18S20Z+T&R

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

DPBT8105-7

DPBT8105-7

Diodes Incorporated

TRANS PNP 60V 1A SOT23-3