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FQA55N10

FQA55N10

For Reference Only

Part Number FQA55N10
PNEDA Part # FQA55N10
Description MOSFET N-CH 100V 61A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA55N10 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA55N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA55N10, FQA55N10 Datasheet (Total Pages: 8, Size: 661.6 KB)
PDFFQA55N10 Datasheet Cover
FQA55N10 Datasheet Page 2 FQA55N10 Datasheet Page 3 FQA55N10 Datasheet Page 4 FQA55N10 Datasheet Page 5 FQA55N10 Datasheet Page 6 FQA55N10 Datasheet Page 7 FQA55N10 Datasheet Page 8

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FQA55N10 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2730pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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