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FQA10N80

FQA10N80

For Reference Only

Part Number FQA10N80
PNEDA Part # FQA10N80
Description MOSFET N-CH 800V 9.8A TO-3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 15 - Mar 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQA10N80 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQA10N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQA10N80, FQA10N80 Datasheet (Total Pages: 8, Size: 678.12 KB)
PDFFQA10N80 Datasheet Cover
FQA10N80 Datasheet Page 2 FQA10N80 Datasheet Page 3 FQA10N80 Datasheet Page 4 FQA10N80 Datasheet Page 5 FQA10N80 Datasheet Page 6 FQA10N80 Datasheet Page 7 FQA10N80 Datasheet Page 8

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FQA10N80 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 4.9A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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