Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FJV3109RMTF

FJV3109RMTF

For Reference Only

Part Number FJV3109RMTF
PNEDA Part # FJV3109RMTF
Description TRANS PREBIAS NPN 200MW SOT23-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Sep 30 - Oct 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FJV3109RMTF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFJV3109RMTF
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
FJV3109RMTF, FJV3109RMTF Datasheet (Total Pages: 4, Size: 52.37 KB)
PDFFJV3109RMTF Datasheet Cover
FJV3109RMTF Datasheet Page 2 FJV3109RMTF Datasheet Page 3 FJV3109RMTF Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FJV3109RMTF Datasheet
  • where to find FJV3109RMTF
  • ON Semiconductor

  • ON Semiconductor FJV3109RMTF
  • FJV3109RMTF PDF Datasheet
  • FJV3109RMTF Stock

  • FJV3109RMTF Pinout
  • Datasheet FJV3109RMTF
  • FJV3109RMTF Supplier

  • ON Semiconductor Distributor
  • FJV3109RMTF Price
  • FJV3109RMTF Distributor

FJV3109RMTF Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)40V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

The Products You May Be Interested In

DDTA144VCA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

33 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

DDTD133HU-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

3.3 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

DTC015EUBTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

20mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

100 kOhms

Resistor - Emitter Base (R2)

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

100mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-85

Supplier Device Package

UMT3F

DTC113EM3T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

3 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

260mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

SOT-723

RN1421TE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 100mA, 1V

Vce Saturation (Max) @ Ib, Ic

250mV @ 2mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

300MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

S-Mini

Recently Sold

K1300E70

K1300E70

Littelfuse

SIDAC 120-138V 1A TO92

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

AD8109ASTZ

AD8109ASTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 80LQFP

LTST-C150CKT

LTST-C150CKT

Lite-On Inc.

LED RED CLEAR 1206 SMD

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

TPSC107M016R0200

TPSC107M016R0200

CAP TANT 100UF 20% 16V 2312

MT29F4G01AAADDHC:D

MT29F4G01AAADDHC:D

Micron Technology Inc.

IC FLASH 4G SPI 63VFBGA

APE30024

APE30024

Panasonic Electric Works

RELAY GEN PURPOSE SPDT 6A 24V

R5F21335CNFP#30

R5F21335CNFP#30

Renesas Electronics America

IC MCU 16BIT 24KB FLASH 32LQFP

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

B0520LW-7-F

B0520LW-7-F

Diodes Incorporated

DIODE SCHOTTKY 20V 500MA SOD123

TAJB107M006RNJ

TAJB107M006RNJ

CAP TANT 100UF 20% 6.3V 1411