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FGPF4565

FGPF4565

For Reference Only

Part Number FGPF4565
PNEDA Part # FGPF4565
Description IGBT 650V 30W TO-220F
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,520
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGPF4565 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGPF4565
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGPF4565, FGPF4565 Datasheet (Total Pages: 8, Size: 369.67 KB)
PDFFGPF4565 Datasheet Cover
FGPF4565 Datasheet Page 2 FGPF4565 Datasheet Page 3 FGPF4565 Datasheet Page 4 FGPF4565 Datasheet Page 5 FGPF4565 Datasheet Page 6 FGPF4565 Datasheet Page 7 FGPF4565 Datasheet Page 8

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FGPF4565 Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)170A
Vce(on) (Max) @ Vge, Ic1.88V @ 15V, 30A
Power - Max30W
Switching Energy-
Input TypeStandard
Gate Charge40.3nC
Td (on/off) @ 25°C11.2ns/40.8ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Test Condition

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Operating Temperature

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Mounting Type

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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46nC

Td (on/off) @ 25°C

24ns/89ns

Test Condition

196V, 12A, 10Ohm

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

536W

Switching Energy

1.7mJ (on), 1.1mJ (off)

Input Type

Standard

Gate Charge

313nC

Td (on/off) @ 25°C

30ns/145ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

240ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

TO-247-4L

STGP8NC60KD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Power - Max

65W

Switching Energy

55µJ (on), 85µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

17ns/72ns

Test Condition

390V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

23.5ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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