FGH60N60SMD
For Reference Only
| Part Number | FGH60N60SMD |
| PNEDA Part # | FGH60N60SMD |
| Description | IGBT 600V 120A 600W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 20,880 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FGH60N60SMD Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FGH60N60SMD |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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FGH60N60SMD Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 180A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Power - Max | 600W |
| Switching Energy | 1.26mJ (on), 450µJ (off) |
| Input Type | Standard |
| Gate Charge | 189nC |
| Td (on/off) @ 25°C | 18ns/104ns |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 39ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 50A Power - Max 390W Switching Energy 255µJ (on), 375µJ (off) Input Type Standard Gate Charge 205nC Td (on/off) @ 25°C 30ns/130ns Test Condition 390V, 33A, 3.3Ohm, 15V Reverse Recovery Time (trr) 42ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer IXYS Series GenX4™, XPT™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 430A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A Power - Max 625W Switching Energy 3.77mJ (on), 1.2mJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 38ns/120ns Test Condition 400V, 80A, 3Ohm, 15V Reverse Recovery Time (trr) 150ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 (IXXH) |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 70A Power - Max 961W Switching Energy 3.82mJ (on), 2.58mJ (off) Input Type Standard Gate Charge 544nC Td (on/off) @ 25°C 33ns/278ns Test Condition 600V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 |
