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FGH25N120FTDS

FGH25N120FTDS

For Reference Only

Part Number FGH25N120FTDS
PNEDA Part # FGH25N120FTDS
Description IGBT 1200V 50A 313W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGH25N120FTDS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGH25N120FTDS
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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FGH25N120FTDS Specifications

ManufacturerON Semiconductor
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 16A

Power - Max

190W

Switching Energy

380µJ (off)

Input Type

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Gate Charge

33nC

Td (on/off) @ 25°C

30ns/116ns

Test Condition

480V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Renesas Electronics America

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

138nC

Td (on/off) @ 25°C

45ns/170ns

Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247A

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

900ns/4.8µs

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

70µJ (on), 145µJ (off)

Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

30ns/95ns

Test Condition

400V, 8A, 47Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

STGWA19NC60HD

STMicroelectronics

Manufacturer

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Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

52A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

208W

Switching Energy

85µJ (on), 189µJ (off)

Input Type

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Gate Charge

53nC

Td (on/off) @ 25°C

25ns/97ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

31ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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