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FGA50N100BNTTU

FGA50N100BNTTU

For Reference Only

Part Number FGA50N100BNTTU
PNEDA Part # FGA50N100BNTTU
Description IGBT 1000V 50A 156W TO3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA50N100BNTTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA50N100BNTTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA50N100BNTTU, FGA50N100BNTTU Datasheet (Total Pages: 8, Size: 702.48 KB)
PDFFGA50N100BNTTU Datasheet Cover
FGA50N100BNTTU Datasheet Page 2 FGA50N100BNTTU Datasheet Page 3 FGA50N100BNTTU Datasheet Page 4 FGA50N100BNTTU Datasheet Page 5 FGA50N100BNTTU Datasheet Page 6 FGA50N100BNTTU Datasheet Page 7 FGA50N100BNTTU Datasheet Page 8

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FGA50N100BNTTU Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max156W
Switching Energy-
Input TypeStandard
Gate Charge257nC
Td (on/off) @ 25°C34ns/243ns
Test Condition600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

1.55mJ (on), 300µJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

29ns/74ns

Test Condition

400V, 40A, 7.5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

9.2ns/281ns

Test Condition

800V, 3A, 82Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 10A

Power - Max

100W

Switching Energy

430µJ (off)

Input Type

Standard

Gate Charge

17nC

Td (on/off) @ 25°C

30ns/180ns

Test Condition

480V, 10A, 30Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

FGL40N120ANTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

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Power - Max

500W

Switching Energy

2.3mJ (on), 1.1mJ (off)

Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

15ns/110ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3

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