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FGA40T65UQDF

FGA40T65UQDF

For Reference Only

Part Number FGA40T65UQDF
PNEDA Part # FGA40T65UQDF
Description IGBT 650V 80A 231W TO3PN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGA40T65UQDF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGA40T65UQDF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGA40T65UQDF, FGA40T65UQDF Datasheet (Total Pages: 11, Size: 849.68 KB)
PDFFGA40T65UQDF Datasheet Cover
FGA40T65UQDF Datasheet Page 2 FGA40T65UQDF Datasheet Page 3 FGA40T65UQDF Datasheet Page 4 FGA40T65UQDF Datasheet Page 5 FGA40T65UQDF Datasheet Page 6 FGA40T65UQDF Datasheet Page 7 FGA40T65UQDF Datasheet Page 8 FGA40T65UQDF Datasheet Page 9 FGA40T65UQDF Datasheet Page 10 FGA40T65UQDF Datasheet Page 11

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FGA40T65UQDF Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.67V @ 15V, 40A
Power - Max231W
Switching Energy989µJ (on), 310µJ (off)
Input TypeStandard
Gate Charge306nC
Td (on/off) @ 25°C32ns/271ns
Test Condition400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)89ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

116ns/286ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Infineon Technologies

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

62ns/690ns

Test Condition

480V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

80nC

Td (on/off) @ 25°C

28ns/122ns

Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

TrenchStop™ 5

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 50A

Power - Max

270W

Switching Energy

1.23mJ (on), 740µJ (off)

Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

20ns/139ns

Test Condition

400V, 50A, 8.2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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