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FF200R12KE3HOSA1

FF200R12KE3HOSA1

For Reference Only

Part Number FF200R12KE3HOSA1
PNEDA Part # FF200R12KE3HOSA1
Description IGBT MODULE VCES 1200V 200A
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FF200R12KE3HOSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberFF200R12KE3HOSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
FF200R12KE3HOSA1, FF200R12KE3HOSA1 Datasheet (Total Pages: 8, Size: 425.98 KB)
PDFFF200R12KE3HOSA1 Datasheet Cover
FF200R12KE3HOSA1 Datasheet Page 2 FF200R12KE3HOSA1 Datasheet Page 3 FF200R12KE3HOSA1 Datasheet Page 4 FF200R12KE3HOSA1 Datasheet Page 5 FF200R12KE3HOSA1 Datasheet Page 6 FF200R12KE3HOSA1 Datasheet Page 7 FF200R12KE3HOSA1 Datasheet Page 8

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FF200R12KE3HOSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Power - Max1050W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Cutoff (Max)

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Input Capacitance (Cies) @ Vce

10.7nF @ 25V

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