FF150R12MS4GBOSA1
For Reference Only
| Part Number | FF150R12MS4GBOSA1 |
| PNEDA Part # | FF150R12MS4GBOSA1 |
| Description | IGBT MODULE VCES 1200V 150A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,448 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FF150R12MS4GBOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | FF150R12MS4GBOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
| Datasheet |
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FF150R12MS4GBOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 225A |
| Power - Max | 1250W |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 150A |
| Current - Collector Cutoff (Max) | 5mA |
| Input Capacitance (Cies) @ Vce | 11nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 150A Power - Max 540W Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 9.5nF @ 25V Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case POWIR® 34 Module Supplier Device Package POWIR® 34 |
