Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDV301N-NB9V005

FDV301N-NB9V005

For Reference Only

Part Number FDV301N-NB9V005
PNEDA Part # FDV301N-NB9V005
Description MOSFET N-CH 25V 220MA SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDV301N-NB9V005 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDV301N-NB9V005
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDV301N-NB9V005, FDV301N-NB9V005 Datasheet (Total Pages: 5, Size: 213.49 KB)
PDFFDV301N-NB9V005 Datasheet Cover
FDV301N-NB9V005 Datasheet Page 2 FDV301N-NB9V005 Datasheet Page 3 FDV301N-NB9V005 Datasheet Page 4 FDV301N-NB9V005 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDV301N-NB9V005 Datasheet
  • where to find FDV301N-NB9V005
  • ON Semiconductor

  • ON Semiconductor FDV301N-NB9V005
  • FDV301N-NB9V005 PDF Datasheet
  • FDV301N-NB9V005 Stock

  • FDV301N-NB9V005 Pinout
  • Datasheet FDV301N-NB9V005
  • FDV301N-NB9V005 Supplier

  • ON Semiconductor Distributor
  • FDV301N-NB9V005 Price
  • FDV301N-NB9V005 Distributor

FDV301N-NB9V005 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id1.06V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Vgs (Max)8V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

TK10A60W5,S5VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 300V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

STW28NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 11.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 100V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

NTMTS0D7N04CTXG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SIA406DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

19.8mOhm @ 10.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 6V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

CEDM8004VL TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 430mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.88nC @ 4.5V

Vgs (Max)

8V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 25V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-883VL

Package / Case

SC-101, SOT-883

Recently Sold

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

NC7WZ241K8X

NC7WZ241K8X

ON Semiconductor

IC BUFFER NON-INVERT 5.5V US8

HM0068ANL

HM0068ANL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

LTC3025EDC-1#TRPBF

LTC3025EDC-1#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 500MA 6DFN

BNX022-01L

BNX022-01L

Murata

FILTER LC 1UF SMD

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

DS1307ZN+T&R

DS1307ZN+T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-SOIC

SMBJ33CA-13-F

SMBJ33CA-13-F

Diodes Incorporated

TVS DIODE 33V 53.3V SMB

ADV7183BBSTZ

ADV7183BBSTZ

Analog Devices

IC VIDEO DECODER NTSC 80-LQFP

MC33161DMR2G

MC33161DMR2G

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8MICRO