Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDS6690A

FDS6690A

For Reference Only

Part Number FDS6690A
PNEDA Part # FDS6690A
Description MOSFET N-CH 30V 11A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS6690A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS6690A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS6690A, FDS6690A Datasheet (Total Pages: 6, Size: 328.92 KB)
PDFFDS6690A Datasheet Cover
FDS6690A Datasheet Page 2 FDS6690A Datasheet Page 3 FDS6690A Datasheet Page 4 FDS6690A Datasheet Page 5 FDS6690A Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDS6690A Datasheet
  • where to find FDS6690A
  • ON Semiconductor

  • ON Semiconductor FDS6690A
  • FDS6690A PDF Datasheet
  • FDS6690A Stock

  • FDS6690A Pinout
  • Datasheet FDS6690A
  • FDS6690A Supplier

  • ON Semiconductor Distributor
  • FDS6690A Price
  • FDS6690A Distributor

FDS6690A Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1205pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

SI1473DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

365pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 2.78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

FET Feature

-

Power Dissipation (Max)

660W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

SI7858BDP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

5760pF @ 6V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

36mOhm @ 47A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

102nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5510pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IRFR9220TRPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

MT29F16G08ABACAWP-ITZ:C

MT29F16G08ABACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

ADM2484EBRWZ

ADM2484EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

XC3S50A-4VQG100C

XC3S50A-4VQG100C

Xilinx

IC FPGA 68 I/O 100VQFP

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

DS1225AD-150IND

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

STM32F103RCT6

STM32F103RCT6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 64LQFP

NC7SZ04P5X

NC7SZ04P5X

ON Semiconductor

IC INVERTER 1CH 1-INP SC70-5

LM2901DR

LM2901DR

Rohm Semiconductor

IC COMPARATOR QUAD GP 14-SOIC

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

MAX660ESA+

MAX660ESA+

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

ADG3308BRUZ

ADG3308BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 20TSSOP