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FDS2170N3

FDS2170N3

For Reference Only

Part Number FDS2170N3
PNEDA Part # FDS2170N3
Description MOSFET N-CH 200V 3A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS2170N3 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS2170N3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS2170N3, FDS2170N3 Datasheet (Total Pages: 6, Size: 183.03 KB)
PDFFDS2170N3 Datasheet Cover
FDS2170N3 Datasheet Page 2 FDS2170N3 Datasheet Page 3 FDS2170N3 Datasheet Page 4 FDS2170N3 Datasheet Page 5 FDS2170N3 Datasheet Page 6

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FDS2170N3 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs128mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1292pF @ 100V
FET Feature-
Power Dissipation (Max)3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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