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FDP10N60NZ

FDP10N60NZ

For Reference Only

Part Number FDP10N60NZ
PNEDA Part # FDP10N60NZ
Description MOSFET N-CH 600V 10A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP10N60NZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP10N60NZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP10N60NZ, FDP10N60NZ Datasheet (Total Pages: 12, Size: 769.4 KB)
PDFFDP10N60NZ Datasheet Cover
FDP10N60NZ Datasheet Page 2 FDP10N60NZ Datasheet Page 3 FDP10N60NZ Datasheet Page 4 FDP10N60NZ Datasheet Page 5 FDP10N60NZ Datasheet Page 6 FDP10N60NZ Datasheet Page 7 FDP10N60NZ Datasheet Page 8 FDP10N60NZ Datasheet Page 9 FDP10N60NZ Datasheet Page 10 FDP10N60NZ Datasheet Page 11

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FDP10N60NZ Specifications

ManufacturerON Semiconductor
SeriesUniFET-II™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1475pF @ 25V
FET Feature-
Power Dissipation (Max)185W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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