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FDP030N06B-F102

FDP030N06B-F102

For Reference Only

Part Number FDP030N06B-F102
PNEDA Part # FDP030N06B-F102
Description MOSFET N-CH 60V 120A TO-220-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDP030N06B-F102 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDP030N06B-F102
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDP030N06B-F102, FDP030N06B-F102 Datasheet (Total Pages: 11, Size: 751.8 KB)
PDFFDP030N06B-F102 Datasheet Cover
FDP030N06B-F102 Datasheet Page 2 FDP030N06B-F102 Datasheet Page 3 FDP030N06B-F102 Datasheet Page 4 FDP030N06B-F102 Datasheet Page 5 FDP030N06B-F102 Datasheet Page 6 FDP030N06B-F102 Datasheet Page 7 FDP030N06B-F102 Datasheet Page 8 FDP030N06B-F102 Datasheet Page 9 FDP030N06B-F102 Datasheet Page 10 FDP030N06B-F102 Datasheet Page 11

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FDP030N06B-F102 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs99nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8030pF @ 30V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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