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FDMS10C4D2N

FDMS10C4D2N

For Reference Only

Part Number FDMS10C4D2N
PNEDA Part # FDMS10C4D2N
Description MOSFET N-CH 100V 17A 8PQFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDMS10C4D2N Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDMS10C4D2N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDMS10C4D2N, FDMS10C4D2N Datasheet (Total Pages: 8, Size: 410.72 KB)
PDFFDMS10C4D2N Datasheet Cover
FDMS10C4D2N Datasheet Page 2 FDMS10C4D2N Datasheet Page 3 FDMS10C4D2N Datasheet Page 4 FDMS10C4D2N Datasheet Page 5 FDMS10C4D2N Datasheet Page 6 FDMS10C4D2N Datasheet Page 7 FDMS10C4D2N Datasheet Page 8

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FDMS10C4D2N Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 44A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

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