FDMC8884-F126
For Reference Only
| Part Number | FDMC8884-F126 |
| PNEDA Part # | FDMC8884-F126 |
| Description | MOSFET N-CH 30V PWR33 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,150 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FDMC8884-F126 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDMC8884-F126 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDMC8884-F126 Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 685pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 18W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
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Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 3V, 8V Rds On (Max) @ Id, Vgs 4mOhm @ 24A, 8V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V Vgs (Max) +10V, -8V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 12.5V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (3.3x3.3) Package / Case 8-PowerTDFN |
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 56A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V FET Feature - Power Dissipation (Max) 780W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package T-MAX™ Package / Case TO-247-3 Variant |
