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FDI3652

FDI3652

For Reference Only

Part Number FDI3652
PNEDA Part # FDI3652
Description MOSFET N-CH 100V 61A TO-262AA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDI3652 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDI3652
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDI3652, FDI3652 Datasheet (Total Pages: 11, Size: 263.34 KB)
PDFFDI3652 Datasheet Cover
FDI3652 Datasheet Page 2 FDI3652 Datasheet Page 3 FDI3652 Datasheet Page 4 FDI3652 Datasheet Page 5 FDI3652 Datasheet Page 6 FDI3652 Datasheet Page 7 FDI3652 Datasheet Page 8 FDI3652 Datasheet Page 9 FDI3652 Datasheet Page 10 FDI3652 Datasheet Page 11

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FDI3652 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2880pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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