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FDI045N10A

FDI045N10A

For Reference Only

Part Number FDI045N10A
PNEDA Part # FDI045N10A
Description MOSFET N-CH 100V 120A I2PAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDI045N10A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDI045N10A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDI045N10A, FDI045N10A Datasheet (Total Pages: 12, Size: 814.79 KB)
PDFFDI045N10A Datasheet Cover
FDI045N10A Datasheet Page 2 FDI045N10A Datasheet Page 3 FDI045N10A Datasheet Page 4 FDI045N10A Datasheet Page 5 FDI045N10A Datasheet Page 6 FDI045N10A Datasheet Page 7 FDI045N10A Datasheet Page 8 FDI045N10A Datasheet Page 9 FDI045N10A Datasheet Page 10 FDI045N10A Datasheet Page 11

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FDI045N10A Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5270pF @ 50V
FET Feature-
Power Dissipation (Max)263W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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