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FDI038AN06A0

FDI038AN06A0

For Reference Only

Part Number FDI038AN06A0
PNEDA Part # FDI038AN06A0
Description MOSFET N-CH 60V 80A TO-262AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDI038AN06A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDI038AN06A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDI038AN06A0, FDI038AN06A0 Datasheet (Total Pages: 12, Size: 541.05 KB)
PDFFDI038AN06A0 Datasheet Cover
FDI038AN06A0 Datasheet Page 2 FDI038AN06A0 Datasheet Page 3 FDI038AN06A0 Datasheet Page 4 FDI038AN06A0 Datasheet Page 5 FDI038AN06A0 Datasheet Page 6 FDI038AN06A0 Datasheet Page 7 FDI038AN06A0 Datasheet Page 8 FDI038AN06A0 Datasheet Page 9 FDI038AN06A0 Datasheet Page 10 FDI038AN06A0 Datasheet Page 11

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FDI038AN06A0 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs124nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6400pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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