Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDD6670AL

FDD6670AL

For Reference Only

Part Number FDD6670AL
PNEDA Part # FDD6670AL
Description MOSFET N-CH 30V 84A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD6670AL Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD6670AL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD6670AL, FDD6670AL Datasheet (Total Pages: 6, Size: 149.12 KB)
PDFFDD6670AL Datasheet Cover
FDD6670AL Datasheet Page 2 FDD6670AL Datasheet Page 3 FDD6670AL Datasheet Page 4 FDD6670AL Datasheet Page 5 FDD6670AL Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDD6670AL Datasheet
  • where to find FDD6670AL
  • ON Semiconductor

  • ON Semiconductor FDD6670AL
  • FDD6670AL PDF Datasheet
  • FDD6670AL Stock

  • FDD6670AL Pinout
  • Datasheet FDD6670AL
  • FDD6670AL Supplier

  • ON Semiconductor Distributor
  • FDD6670AL Price
  • FDD6670AL Distributor

FDD6670AL Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C84A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3845pF @ 15V
FET Feature-
Power Dissipation (Max)83W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPW65R190CFDAFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 100V

FET Feature

-

Power Dissipation (Max)

151W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

NVMFS5C628NLWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 135µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

IPC302N25N3AX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

Sawn on foil

Package / Case

Die

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

66mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1.465nF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

LSIC1MO120E0120

Littelfuse

Manufacturer

Littelfuse Inc.

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

150mOhm @ 14A, 20V

Vgs(th) (Max) @ Id

4V @ 7mA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 20V

Vgs (Max)

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds

1125pF @ 800V

FET Feature

-

Power Dissipation (Max)

139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Recently Sold

ATSAM3X8EA-AU

ATSAM3X8EA-AU

Microchip Technology

IC MCU 32BIT 512KB FLASH 144LQFP

VESD05A1B-02V-G-08

VESD05A1B-02V-G-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 11V SOD523

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

BSS138-7-F

BSS138-7-F

Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

REF02CSZ

REF02CSZ

Analog Devices

IC VREF SERIES 5V 8SOIC

NFM41CC223R2A3L

NFM41CC223R2A3L

Murata

CAP FEEDTHRU 0.022UF 100V 1806

FDS4935BZ

FDS4935BZ

ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

7443551131

7443551131

Wurth Electronics

FIXED IND 13UH 10A 11.2 MOHM SMD

MMBT4401LT1G

MMBT4401LT1G

ON Semiconductor

TRANS NPN 40V 0.6A SOT23

ECLAMP2410P.TCT

ECLAMP2410P.TCT

Semtech

FILTER RC(PI) 45 OHM/12PF SMD

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917