FDD5N53TM_WS
![FDD5N53TM_WS](http://pneda.ltd/static/products/images_mk/400/FDD5N53TM_WS.webp)
For Reference Only
Part Number | FDD5N53TM_WS |
PNEDA Part # | FDD5N53TM_WS |
Description | MOSFET N-CH 530V 4A DPAK |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 5,076 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
FDD5N53TM_WS Resources
Brand | ON Semiconductor |
ECAD Module |
![]() |
Mfr. Part Number | FDD5N53TM_WS |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
![TT](/res/v2/images/help/p-tt.gif )
![Unionpay](/res/v2/images/help/p-unionpay.gif )
![paypal](/res/v2/images/help/p-paypal.gif )
![paypalwtcreditcard](/res/v2/images/help/p-paypalwtcreditcard.gif )
![alipay](/res/v2/images/help/p-alipay.gif )
![wu](/res/v2/images/help/p-wu.gif )
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
![TNT](/res/v2/images/help/s-tnt.gif )
![UPS](/res/v2/images/help/s-ups.gif )
![Fedex](/res/v2/images/help/s-fedex.gif )
![EMS](/res/v2/images/help/s-ems.gif )
![DHL](/res/v2/images/help/s-dhl.gif )
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- FDD5N53TM_WS Datasheet
- where to find FDD5N53TM_WS
- ON Semiconductor
- ON Semiconductor FDD5N53TM_WS
- FDD5N53TM_WS PDF Datasheet
- FDD5N53TM_WS Stock
- FDD5N53TM_WS Pinout
- Datasheet FDD5N53TM_WS
- FDD5N53TM_WS Supplier
- ON Semiconductor Distributor
- FDD5N53TM_WS Price
- FDD5N53TM_WS Distributor
FDD5N53TM_WS Specifications
Manufacturer | ON Semiconductor |
Series | UniFET™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 530V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2204pF @ 25V FET Feature - Power Dissipation (Max) 1.79W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro8™ Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1625pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK33 Package / Case SOT-1210, 8-LFPAK33 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 73A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 39mOhm @ 36A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 362nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7700pF @ 100V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-247-3 |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 630mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |