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FDD10N20LZTM

FDD10N20LZTM

For Reference Only

Part Number FDD10N20LZTM
PNEDA Part # FDD10N20LZTM
Description MOSFET N-CH 200V 7.6A DPAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD10N20LZTM Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD10N20LZTM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD10N20LZTM, FDD10N20LZTM Datasheet (Total Pages: 10, Size: 720.16 KB)
PDFFDD10N20LZTM Datasheet Cover
FDD10N20LZTM Datasheet Page 2 FDD10N20LZTM Datasheet Page 3 FDD10N20LZTM Datasheet Page 4 FDD10N20LZTM Datasheet Page 5 FDD10N20LZTM Datasheet Page 6 FDD10N20LZTM Datasheet Page 7 FDD10N20LZTM Datasheet Page 8 FDD10N20LZTM Datasheet Page 9 FDD10N20LZTM Datasheet Page 10

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FDD10N20LZTM Specifications

ManufacturerON Semiconductor
SeriesUniFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds585pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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